The application of an ultra-thin ALD HfSiON cap layer on SiON dielectrics for Ni-FUSI CMOS technology targeting at low power applications

Chang, Shou-ZenShou-ZenChangYu, HongYuHongYuYuVeloso, AnabelaAnabelaVelosoLauwers, AnneAnneLauwersDelabie, AnneliesAnneliesDelabieEveraert, Jean-LucJean-LucEveraertKerner, ChristophChristophKernerAbsil, PhilippePhilippeAbsilHoffmann, Thomas Y.Thomas Y.HoffmannBiesemans, SergeSergeBiesemans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11839The application of an ultra-thin ALD HfSiON cap layer on SiON dielectrics for Ni-FUSI CMOS technology targeting at low power applicationsJournal article