Ge gate stack passivation for MOS devices: need for atomically controlled processing

Sioncke, SonjaSonjaSionckeArimura, HiroakiHiroakiArimuraCott, DaireDaireCottFranco, JacopoJacopoFrancoCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24536Ge gate stack passivation for MOS devices: need for atomically controlled processingMeeting abstract