A compact model for the grounded-gate nMOS behaviour under CDM ESD stress

Russ, ChristianChristianRussVerhaege, KoenKoenVerhaegeBock, KarlheinzKarlheinzBockRoussel, PhilippePhilippeRousselGroeseneken, GuidoGuidoGroesenekenMaes, HermanHermanMaes2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1446A compact model for the grounded-gate nMOS behaviour under CDM ESD stressProceedings paper