Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Gorchichko, MariiaMariiaGorchichkoZhang, En XiaEn XiaZhangWang, PanPanWangBonaldo, StefanoStefanoBonaldoSchrimpf, Ronald D.Ronald D.SchrimpfReed, Robert A.Robert A.ReedLinten, DimitriDimitriLintenMitard, JeromeJeromeMitardFleetwood, Daniel M.Daniel M.Fleetwood2022-03-312021-11-022022-03-312022-03-3120210018-9499WOS:000655537500029https://imec-publications.be/handle/20.500.12860/37952Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS TransistorsJournal article10.1109/TNS.2021.3066612WOS:000655537500029LOW-FREQUENCY NOISERANDOM TELEGRAPH NOISE1/F NOISERADIATION RESPONSEINTERFACE STATESBORDER TRAPSMOSDEFECTSHFO2DEPENDENCE