Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation

Hayama, K.K.HayamaTakakura, K.K.TakakuraOhyama, H.H.OhyamaKuboyama, S.S.KuboyamaSimoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaClaeys, CorCorClaeys2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12260Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiationJournal article