Van Elshocht, SvenSvenVan ElshochtBrijs, BertBertBrijsCaymax, MattyMattyCaymaxConard, ThierryThierryConardDe Gendt, StefanStefanDe GendtKubicek, StefanStefanKubicekMeuris, MarcMarcMeurisOnsia, BartBartOnsiaRichard, OlivierOlivierRichardTeerlinck, IvoIvoTeerlinckVan Steenbergen, JanJanVan SteenbergenZhao, ChaoChaoZhaoHeyns, MarcMarcHeyns2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8270Physical characterization of HfO2 deposited on Ge substrates by MOCVDProceedings paper