Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate

Medjdoub, FaridFaridMedjdoubDerluyn, JoffJoffDerluynCheng, KaiKaiChengLeys, MaartenMaartenLeysDegroote, StefanStefanDegrooteMarcon, DenisDenisMarconVisalli, DomenicaDomenicaVisalliVan Hove, MarleenMarleenVan HoveGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-182021-10-1820100741-3106https://imec-publications.be/handle/20.500.12860/17606Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrateJournal articlehttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5378574