Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode

Lin, Wei-SyuanWei-SyuanLinBakeroot, BenoitBenoitBakerootHuang, Zhen-HongZhen-HongHuangLo, Ting-ChunTing-ChunLoBorga, MatteoMatteoBorgaWellekens, DirkDirkWellekensPosthuma, NielsNielsPosthumaDecoutere, StefaanStefaanDecoutereWu, Tian-LiTian-LiWu2024-08-222024-07-042024-08-2220240018-9383WOS:001252442000001https://imec-publications.be/handle/20.500.12860/44118Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode ModeJournal article10.1109/TED.2024.3412095WOS:001252442000001