Atom probe conditions for stoichiometric quantification of GaN and Al1 xGaxN

Morris, RichardRichardMorrisArnoldi, LaurentLaurentArnoldiCuduvally, RamyaRamyaCuduvallyMelkonyan, DavitDavitMelkonyanFleischmann, ClaudiaClaudiaFleischmannZhao, MingMingZhaoVandervorst, WilfriedWilfriedVandervorst2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29022Atom probe conditions for stoichiometric quantification of GaN and Al1 xGaxNOral presentationhttp://sims.confer.uj.edu.pl/boa_poster.php?id=169