Epitaxial growth of Ga doped SiGe for reduction of contact resistance in finFET source/drain materials

Margetis, JoeJoeMargetisKohen, DavidDavidKohenPorret, ClémentClémentPorretPetersen Barbosa Lima, LucasLucasPetersen Barbosa LimaKhazaka, RamiRamiKhazakaLoo, RogerRogerLooTolle, JohnJohnTolle2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33534Epitaxial growth of Ga doped SiGe for reduction of contact resistance in finFET source/drain materialsMeeting abstract