On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

Bellens, RudiRudiBellensDe Schrijver, ErikErikDe SchrijverVan den Bosch, GeertGeertVan den BoschGroeseneken, GuidoGuidoGroesenekenHeremans, PaulPaulHeremansMaes, HermanHermanMaes2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/28On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistorsJournal article