Radiation induced transformation of impurity centers in the gate oxide of short channel SOI MOSFETs

Evtukh, A.A.EvtukhKizjak, A.A.KizjakLitovchenko, V.G.V.G.LitovchenkoClaeys, CorCorClaeysSimoen, EddyEddySimoen2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10442Radiation induced transformation of impurity centers in the gate oxide of short channel SOI MOSFETsProceedings paper