Origin of multiple memory states in organic ferroelectric field-effect transistors

Kam, BenjaminBenjaminKamLi, XiaoranXiaoranLiCristoferi, ClaudioClaudioCristoferiSmits, Edsger C.P.Edsger C.P.SmitsMityashin, AlexanderAlexanderMityashinSchols, SarahSarahScholsGenoe, JanJanGenoeGelinck, GerwinGerwinGelinckHeremans, PaulPaulHeremans2021-10-202021-10-2020120003-6951https://imec-publications.be/handle/20.500.12860/20896Origin of multiple memory states in organic ferroelectric field-effect transistorsJournal article