EB metrology of Ge channel gate-all-around FET: buckling evaluation and EB damage assessment

Ohashi, TakeyoshiTakeyoshiOhashiHasumi, KazuhisaKazuhisaHasumiIkota, MasamiMasamiIkotaLorusso, GianGianLorussoWitters, LiesbethLiesbethWittersHoriguchi, NaotoNaotoHoriguchi2021-10-292021-10-292020https://imec-publications.be/handle/20.500.12860/35666EB metrology of Ge channel gate-all-around FET: buckling evaluation and EB damage assessmentProceedings paperhttps://doi.org/10.1117/12.2552193