NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 pFinFETs

Xie, DuanDuanXieSimoen, EddyEddySimoenArimura, HiroakiHiroakiArimuraCapogreco, ElenaElenaCapogrecoMitard, JeromeJeromeMitardHoriguchi, NaotoNaotoHoriguchi2023-04-122023-01-292023-04-1220220018-9383WOS:000910985900047https://imec-publications.be/handle/20.500.12860/41048NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 pFinFETsJournal article10.1109/TED.2022.3212324WOS:000910985900047MOBILITYFINFETS