vfTLP characteristics of ESD diodes in bulk Si gate-all-around vertically stacked horizontal nanowire technology

Chen, Shih-HungShih-HungChenHellings, GeertGeertHellingsScholz, MirkoMirkoScholzLinten, DimitriDimitriLintenMertens, HansHansMertensRitzenthaler, RomainRomainRitzenthalerBoschke, RomanRomanBoschkeGroeseneken, GuidoGuidoGroesenekenMocuta, AndaAndaMocutaHoriguchi, NaotoNaotoHoriguchi2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/28016vfTLP characteristics of ESD diodes in bulk Si gate-all-around vertically stacked horizontal nanowire technologyMeeting abstracthttp://ieeexplore.ieee.org/document/8073454/