Electron valence band tunnelling induced excess Lorentzian noise in fully depleted SOI transistors

Simoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaClaeys, CorCorClaeysLukyanchikova, N.B.N.B.LukyanchikovaGarbar, N.N.Garbar2021-10-152021-10-152003-09https://imec-publications.be/handle/20.500.12860/8148Electron valence band tunnelling induced excess Lorentzian noise in fully depleted SOI transistorsProceedings paper