First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack

Sioncke, SonjaSonjaSionckeFranco, JacopoJacopoFrancoVais, AbhitoshAbhitoshVaisPutcha, VamsiVamsiPutchaNyns, LauraLauraNynsSibaja-Hernandez, ArturoArturoSibaja-HernandezRooyackers, RitaRitaRooyackersCalderon Ardila, SergioSergioCalderon ArdilaSpampinato, ValentinaValentinaSpampinatoFranquet, AlexisAlexisFranquetMaes, WillemWillemMaesXie, QiQiXieGivens, MichaelMichaelGivensTang, FuFuTangJiang, X.X.JiangHeyns, MarcMarcHeynsLinten, DimitriDimitriLintenMitard, JeromeJeromeMitardThean, AaronAaronTheanMocuta, DanDanMocutaCollaert, NadineNadineCollaert2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29450First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stackProceedings paperhttp://ieeexplore.ieee.org/document/7998192/