p-GaN gate HEMTs, RTL logic, and gate driver monolithically integrated on 200 mm QST® substrates for GaN ICs

Li, XiangdongXiangdongLiGeens, KarenKarenGeensGuo, WeimingWeimingGuoZhao, MingMingZhaoYou, ShuzhenShuzhenYouPosthuma, NielsNielsPosthumaStoffels, SteveSteveStoffelsLiang, HuHuLiangOdnoblyudov, VladimirVladimirOdnoblyudovBasceri, CemCemBasceriAktas, OzgurOzgurAktasGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33433p-GaN gate HEMTs, RTL logic, and gate driver monolithically integrated on 200 mm QST® substrates for GaN ICsMeeting abstract