H2O- and O3-based atomic layer deposition of high-K dielectric films on GeO2 passivation layers

Delabie, AnneliesAnneliesDelabieAlian, AliRezaAliRezaAlianBellenger, FlorenceFlorenceBellengerCaymax, MattyMattyCaymaxConard, ThierryThierryConardFranquet, AlexisAlexisFranquetSioncke, SonjaSonjaSionckeVan Elshocht, SvenSvenVan ElshochtHeyns, MarcMarcHeynsMeuris, MarcMarcMeuris2021-10-172021-10-1720090013-4651https://imec-publications.be/handle/20.500.12860/15215H2O- and O3-based atomic layer deposition of high-K dielectric films on GeO2 passivation layersJournal article