Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique

Waldron, NiamhNiamhWaldronWang, GangGangWangNguyen, Ngoc DuyNgoc DuyNguyenOrzali, TommasoTommasoOrzaliMerckling, ClementClementMercklingBrammertz, GuyGuyBrammertzOng, PatrickPatrickOngWinderickx, GillisGillisWinderickxHellings, GeertGeertHellingsEneman, GeertGeertEnemanCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronThean2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21827Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping techniqueProceedings paper