Sub-nanometer two-dimensional carrier profiling in silicon MOS technologies using high vacuum scanning spreading resistance microscopy

Eyben, PierrePierreEybenMody, JayJayModyNazir, AftabAftabNazirSchulze, AndreasAndreasSchulzeHantschel, ThomasThomasHantschelVandervorst, WilfriedWilfriedVandervorst2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15288Sub-nanometer two-dimensional carrier profiling in silicon MOS technologies using high vacuum scanning spreading resistance microscopyMeeting abstract