Integration of PVD ruthenium as a pMOS metal gate in scaled planar devices: workfunction and electrical performance on HfO2

Deweerd, WimWimDeweerdSchram, TomTomSchramVan Hoornick, NausikaaNausikaaVan HoornickWitters, ThomasThomasWittersLisoni, JuditJuditLisoniRohr, ErikaErikaRohrDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsSchaekers, MarcMarcSchaekersRichard, OlivierOlivierRichardWickramanayaka, SunilSunilWickramanayakaYamada, N.N.YamadaBrunco, DavidDavidBrunco2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10385Integration of PVD ruthenium as a pMOS metal gate in scaled planar devices: workfunction and electrical performance on HfO2Proceedings paper