Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

Kaczer, BenBenKaczerArkhipov, VladimirVladimirArkhipovJurczak, GosiaGosiaJurczakGroeseneken, GuidoGuidoGroeseneken2021-10-162021-10-162005-06https://imec-publications.be/handle/20.500.12860/10669Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kineticsJournal article