Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components

Toledano Luque, MariaMariaToledano LuqueKaczer, BenBenKaczerAoulaiche, MarcMarcAoulaicheSpessot, AlessioAlessioSpessotRoussel, PhilippePhilippeRousselRitzenthaler, RomainRomainRitzenthalerSchram, TomTomSchramThean, AaronAaronTheanGroeseneken, GuidoGuidoGroeseneken2021-10-212021-10-2120130167-9317https://imec-publications.be/handle/20.500.12860/23175Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging componentsJournal articlehttp://www.sciencedirect.com/science/article/pii/S0167931713002499