Ni fully silicided gates for 45 nm CMOS applications

Kittl, JorgeJorgeKittlLauwers, AnneAnneLauwersKmieciak, MalgorzataMalgorzataKmieciakVan Dal, MarkMarkVan DalVeloso, AnabelaAnabelaVelosoKottantharayil, AnilAnilKottantharayilPourtois, GeoffreyGeoffreyPourtoisDemeurisse, CarolineCarolineDemeurisseSchram, TomTomSchramBrijs, BertBertBrijsde Potter de ten Broeck, MurielMurielde Potter de ten BroeckVrancken, ChristaChristaVranckenMaex, KarenKarenMaex2021-10-162021-10-162005-08https://imec-publications.be/handle/20.500.12860/10701Ni fully silicided gates for 45 nm CMOS applicationsJournal article