Strained germanium quantum well p-FinFETs fabricated on 45nm fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect

Witters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardLoo, RogerRogerLooDemuynck, StevenStevenDemuynckChew, Soon AikSoon AikChewSchram, TomTomSchramTao, ZhengZhengTaoHikavyy, AndriyAndriyHikavyySun, JianwuJianwuSunMilenin, AlexeyAlexeyMileninMertens, HansHansMertensVrancken, ChristaChristaVranckenFavia, PaolaPaolaFaviaSchaekers, MarcMarcSchaekersBender, HugoHugoBenderHoriguchi, NaotoNaotoHoriguchiLanger, RobertRobertLangerBarla, KathyKathyBarlaMocuta, DanDanMocutaCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-232021-10-232015https://imec-publications.be/handle/20.500.12860/26181Strained germanium quantum well p-FinFETs fabricated on 45nm fin pitch using replacement channel, replacement metal gate and germanide-free local interconnectProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7223701