SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET

Bauer, MatthiasMatthiasBauerMachkaoutsan, VladimirVladimirMachkaoutsanZhang, Y.Y.ZhangWeeks, DoranDoranWeeksSpear, JenniferJenniferSpearThomas, ShawnShawnThomasVerheyen, PeterPeterVerheyenKerner, ChristophChristophKernerClemente, FrancescaFrancescaClementeBender, HugoHugoBenderShamiryan, DenisDenisShamiryanLoo, RogerRogerLooHikavyy, AndriyAndriyHikavyyHoffmann, Thomas Y.Thomas Y.HoffmannAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemans2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13351SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFETProceedings paper