Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy

Eyben, PierrePierreEybenAlvarez, DavidDavidAlvarezJurczak, GosiaGosiaJurczakRooyackers, RitaRitaRooyackersDe Keersgieter, AnAnDe KeersgieterAugendre, EmmanuelEmmanuelAugendreVandervorst, WilfriedWilfriedVandervorst2021-10-152021-10-152004-01https://imec-publications.be/handle/20.500.12860/8895Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopyJournal article