Novel high growth rate processes for depositing poly-SiGe structural layers at CMOS compatible temperatures

Mehta, AnshuAnshuMehtaGromova, MariaMariaGromovaRusu, C.C.RusuBaert, KrisKrisBaertVan Hoof, ChrisChrisVan HoofWitvrouw, AnnAnnWitvrouwRichard, OlivierOlivierRichard2021-10-152021-10-152004-01https://imec-publications.be/handle/20.500.12860/9282Novel high growth rate processes for depositing poly-SiGe structural layers at CMOS compatible temperaturesProceedings paper