Influence of the process sequence and termal budget on the strain of SiC stressor layers formed by ion implantation

Rosseel, ErikErikRosseelOrtolland, ClaudeClaudeOrtollandHikavyy, AndriyAndriyHikavyySchram, TomTomSchramFalepin, AnneliesAnneliesFalepinHoffmann, Thomas Y.Thomas Y.HoffmannDouhard, BastienBastienDouhardMoussa, AlainAlainMoussaVandervorst, WilfriedWilfriedVandervorstAmeen, MikeMikeAmeenRubin, LeonardLeonardRubin2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17909Influence of the process sequence and termal budget on the strain of SiC stressor layers formed by ion implantationProceedings paperhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5623702