Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs

Rafi, Joan MarcJoan MarcRafiMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9487Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETsJournal article