Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate

Borga, MatteoMatteoBorgaMeneghini, MatteoMatteoMeneghiniStoffels, SteveSteveStoffelsVan Hove, MarleenMarleenVan HoveLi, XiangdongXiangdongLiZhao, MingMingZhaoMeneghesso, GaudenzioGaudenzioMeneghessoZanoni, EnricoEnricoZanoni2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30302Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrateProceedings paper