Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500°C and from Si3H8 at 350°C due to segregation of Ge

Valev, V.K.V.K.ValevLeys, FrederikFrederikLeysCaymax, MattyMattyCaymaxVerbiest, T.T.Verbiest2021-10-182021-10-1820090003-6951https://imec-publications.be/handle/20.500.12860/16343Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500°C and from Si3H8 at 350°C due to segregation of GeJournal article