Properties and growth peculiarities of Si0.30Ge0.70 stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors

Hikavyy, AndriyAndriyHikavyyRosseel, ErikErikRosseelKubicek, StefanStefanKubicekMannaert, GeertGeertMannaertFavia, PaolaPaolaFaviaBender, HugoHugoBenderLoo, RogerRogerLooHoriguchi, NaotoNaotoHoriguchi2021-10-232021-10-232016-030040-6090https://imec-publications.be/handle/20.500.12860/26725Properties and growth peculiarities of Si0.30Ge0.70 stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistorsJournal articlehttp://www.sciencedirect.com/science/article/pii/S0040609015009682