Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures

Cui, HushanHushanCuiVan Hoof, RitaRitaVan HoofSeveri, SimoneSimoneSeveriWitvrouw, AnnAnnWitvrouwKnoops, AnAnKnoopsDelande, TinneTinneDelandePancken, JorisJorisPanckenClaes, MartineMartineClaes2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/16924Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structuresProceedings paper