Impact of the Ge content on the bandgap-narrowing induced leakage current of recessed Si1-xGex source/drain junctions

Bargallo Gonzalez, MireiaMireiaBargallo GonzalezSimoen, EddyEddySimoenVerheyen, PeterPeterVerheyenLoo, RogerRogerLooClaeys, CorCorClaeys2021-10-172021-10-1720090018-9383https://imec-publications.be/handle/20.500.12860/14946Impact of the Ge content on the bandgap-narrowing induced leakage current of recessed Si1-xGex source/drain junctionsJournal article