Modeling the impact of junction angles in tunnel field-effect transistors

Kao, FrankFrankKaoVerhulst, AnneAnneVerhulstVandenberghe, WilliamWilliamVandenbergheSoree, BartBartSoreeGroeseneken, GuidoGuidoGroesenekenDe Meyer, KristinKristinDe Meyer2021-10-202021-10-2020120038-1101https://imec-publications.be/handle/20.500.12860/20902Modeling the impact of junction angles in tunnel field-effect transistorsJournal article