Chen, YangyinYangyinChenPourtois, GeoffreyGeoffreyPourtoisWang, Xin PengXin PengWangAdelmann, ChristophChristophAdelmannGoux, LudovicLudovicGouxGovoreanu, BogdanBogdanGovoreanuPantisano, LuigiLuigiPantisanoKubicek, StefanStefanKubicekAltimime, LaithLaithAltimimeJurczak, GosiaGosiaJurczakKittl, JorgeJorgeKittlGroeseneken, GuidoGuidoGroesenekenWouters, DirkDirkWouters2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18667Switching by Ni filaments in a HfO2 matrix: a new pathway to improved unipolar switching RRAMProceedings paper