Wang, JieJieWangChen, ZhanfeiZhanfeiChenYou, ShuzhenShuzhenYouZhou, WenyongWenyongZhouBakeroot, BenoitBenoitBakerootLiu, JunJunLiuSun, LinglingLinglingSunDecoutere, StefaanStefaanDecoutere2021-10-292021-10-2920200018-9383https://imec-publications.be/handle/20.500.12860/36301Surface-potential-based compact model for the gate current of p-GaN gate HEMTsJournal articlehttps://ieeexplore.ieee.org/document/9159856