Declercq, JakobJakobDeclercqNiu, ShengpuShengpuNiuNiels, MargotMargotNielsShahin, AmirAmirShahinVan Kerrebrouck, JorisJorisVan KerrebrouckBerciano, MathiasMathiasBercianoLambrecht, JorisJorisLambrechtMoeneclaey, BartBartMoeneclaeyVanackere, TomTomVanackereVissers, EwoudEwoudVissersCoughlan, ConorConorCoughlanMoerman, ArnoArnoMoermanCaytan, OlivierOlivierCaytanLemey, SamSamLemeyChakrabarti, MaumitaMaumitaChakrabartiKobbi, HakimHakimKobbiKim, MinkyuMinkyuKimYudistra, DiditDiditYudistraLoo, RogerRogerLooBipul, SwetanshuSwetanshuBipulFerraro, FilippoFilippoFerraroBan, YoojinYoojinBanDe Heyn, PeterPeterDe HeynRoelkens, GuntherGuntherRoelkensTorfs, GuyGuyTorfsBauwelinck, JohanJohanBauwelinckVelenis, DimitriosDimitriosVelenisOssieur, PeterPeterOssieurAbsil, PhilippePhilippeAbsilBillet, MaximilienMaximilienBilletKuyken, BartBartKuykenVan Campenhout, JorisJorisVan CampenhoutSingh, NishantNishantSinghBruynsteen, CedricCedricBruynsteenYin, XinXinYin2026-09-282026-09-2820260733-8724https://imec-publications.be/handle/20.500.12860/60510We demonstrate a 2 km O-band optical link achieving a gross data rate of 320 Gb/s without optical amplification, leveraging a fully foundry-compatible silicon photonics platform enhanced by heterogeneous integration. The transmitter employs a transfer-printed thin-film lithium niobate (TFLN) Mach–Zehnder modulator driven by a custom-designed traveling-wave driver, while the receiver integrates a 100 GHz germanium photodiode and a traveling-wave transimpedance amplifier (TIA). Both electronic ICs are implemented in a 55 nm SiGe BiCMOS technology, ensuring high bandwidth and linearity. The link supports PAM-4 signaling up to 144 GBd with a BER below the KP4 FEC threshold and 160 GBd with a BER below the 6.7% HD-FEC threshold. This co-design approach shows the potential of transfer-printing-enabled silicon photonics platforms for next-generation 400 Gb/s per lane IM/DD transceivers.engJournal article10.1109/jlt.2026.3711806WOS:0018501620000021558-2213