Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization

Serrano, J. J.J. J.SerranoDe Witte, HildeHildeDe WitteVandervorst, WilfriedWilfriedVandervorstGuzman, B.B.GuzmanBlanco, J. M.J. M.Blanco2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5648Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionizationJournal article