Wu, Yung-HsienYung-HsienWuWouters, DirkDirkWoutersHendrickx, PaulPaulHendrickxZhang, LeqiLeqiZhangChen, YangyinYangyinChenGoux, LudovicLudovicGouxFantini, AndreaAndreaFantiniGroeseneken, GuidoGuidoGroesenekenJurczak, GosiaGosiaJurczak2021-10-212021-10-2120130741-3106https://imec-publications.be/handle/20.500.12860/23406On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structureJournal article