Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation

Arimura, HiroakiHiroakiArimuraSioncke, SonjaSonjaSionckeCott, DaireDaireCottMitard, JeromeJeromeMitardConard, ThierryThierryConardVanherle, WendyWendyVanherleLoo, RogerRogerLooFavia, PaolaPaolaFaviaBender, HugoHugoBenderMeersschaut, JohanJohanMeersschautWitters, LiesbethLiesbethWittersMertens, HansHansMertensFranco, JacopoJacopoFrancoRagnarsson, Lars-AkeLars-AkeRagnarssonPourtois, GeoffreyGeoffreyPourtoisHeyns, MarcMarcHeynsMocuta, AndaAndaMocutaCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/24939Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formationProceedings paper