Mantl, S.S.MantlBuca, DanDanBucaHollander, BerndBerndHollanderTrinkaus, HelmutHelmutTrinkausHueging, NorbertNorbertHuegingLuysberg, MartinaMartinaLuysbergLenk, SteffiSteffiLenkLoo, RogerRogerLooCaymax, MattyMattyCaymaxShaefer, HerbertHerbertShaeferReiche, ManfredManfredReicheRadu, IonutIonutRadu2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10845The use of ion implantation of strained silicon on SiO2 for nanoelectronic devicesProceedings paper