Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer

Zheng, LiLiZhengHe, WeiWeiHeSpampinato, ValentinaValentinaSpampinatoFranquet, AlexisAlexisFranquetSergeant, StefanieStefanieSergeantDe Gendt, StefanStefanDe GendtArmini, SilviaSilviaArmini2021-11-252021-11-022021-11-2520200743-7463WOS:000592410700002https://imec-publications.be/handle/20.500.12860/38280Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation LayerJournal article10.1021/acs.langmuir.0c00741WOS:000592410700002SELF-ASSEMBLED MONOLAYERSSURFACE-CHEMISTRYTHIN-FILMSGROWTHNANOSCALEOXIDEALDMEDLINE:33104359