Large marginal 2D self-aligned via patterning for sub-5nm technology

Choi, SuhyeongSuhyeongChoiLee, Jae UkJae UkLeeBlanco, VictorVictorBlancoDebacker, PeterPeterDebackerRaghavan, PraveenPraveenRaghavanKim, Ryan Ryoung hanRyan Ryoung hanKimShin, YoungsooYoungsooShin2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/28030Large marginal 2D self-aligned via patterning for sub-5nm technologyProceedings paper10.1117/12.2257924