Radiation-induced back channel leakage in MeV-proton-irradiated 0.10 mm-CMOS partially depleted SOI MOSFETs

Rafi, Joan MarcJoan MarcRafiMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeysMohammadzadeh, A.A.Mohammadzadeh2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8053Radiation-induced back channel leakage in MeV-proton-irradiated 0.10 mm-CMOS partially depleted SOI MOSFETsOral presentation