The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures

Nicolett, A.S.A.S.NicolettMartino, J.A.J.A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6645The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperaturesProceedings paper