In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs

Trevisoli, R.R.Trevisolide Souza, M.M.de SouzaMartino, J.A.J.A.MartinoSimoen, EddyEddySimoenClaeys, CorCorClaeysPavanello, M.A.M.A.Pavanello2021-10-222021-10-2220150167-9317https://imec-publications.be/handle/20.500.12860/26006In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETsJournal articlehttp://www.sciencedirect.com/science/article/pii/S0167931715002683